low-noise amplifier

And a design of RF front-end, such as the W-band Low-noise Amplifier and mixer assembly, is discussed.

讨论了W波段低噪声放大器和混频组件等射频前端的设计。

In the third chapter, the noise characteristics of the CMOS low-noise amplifier are analyzed theoretically and exhaustively.

第三章我们对CMOS低噪声放大器的噪声特性进行了详尽的理论分析。

Through the low-noise amplifier designed, the spectrum and time figure of the transistor noise at low frequency ( 100mHz~ 1.65Hz) was measured, besides that, the scale invariant range and fractal dimension are calculated with several methods.

利用设计的低噪声放大器，测量出晶体管低频段（100mHz&1.65Hz）噪声的功率谱及时间波形，找出了其无标度区间，并用多种方法计算了分形维。